AOS Launches 600V Super Junction MOSFETs for High-Density Power Applications

Alpha and Omega Semiconductor Limited (AOS) (Nasdaq: AOSL), a designer, developer, and global supplier of a broad range of discrete power devices, wide-bandgap power devices, power management ICs and modules, announced the release of αMOS E2™ 600V Super Junction MOSFETs: AOGT037V60DE2 and AOGT060V60DE2. AOS engineered its newly developed αMOS E2 High-Voltage MOSFET platform to meet the growing demands for enhanced efficiency and increased power density management capabilities. These 600V Super Junction MOSFETs provide excellent performance across a wide range of’s higher voltage applications, including servers, workstations, telecom rectifiers, solar inverters, motor drives and industrial power systems.

Users of the latest high-performance SMPS and solar inverters expect higher efficiency, greater power density, lower system cost and uncompromising robustness. The advanced technology features in AOS’ top-side-cooled high-voltage Super Junction MOSFETs address these needs. These devices also meet the critical requirements in multiple topologies such as boost PFC, totem-pole PFC (slow leg), LLC resonant, PSFB and cyclo-converters.

AOS’ αMOS E2 High-Voltage Super Junction MOSFET platform features exceptional body-diode ruggedness (di/dt = 1500 A/µs), superior avalanche (UIS) capability, and short-circuit withstand time (SCWT). This enhanced ruggedness translates into higher system-level reliability, helping to ensure robust operation even under abnormal scenarios. Furthermore, AOS combines this αMOS E2 silicon with its top-side-cooled GTPAK™ package to maximise thermal performance via the top-side cooling pad. As a result, system designers can fully optimise thermal dissipation and reclaim PCB space to maximise overall power density. By co-optimising both the electrical and thermal paths, system performance and long-term reliability are greatly enhanced.

“Our top-side cooled GTPAK products, such as the AOGT037V60DE2 and AOGT060V60DE2, are engineered to meet the demands of high-performance AC/DC power supplies, DC/DC converters and DC/AC solar inverters. Electromagnetic emission (EMI) and density bottlenecks of traditional bottom-side cooling have been a major engineering hurdle. Our αMOS E2 top-side cooled solutions give designers a premier solution for mid-to-high-power systems, empowering the performance-driven power infrastructure, power supply units, and renewable energy systems,” said Simon Yu, Senior Manager of HV Product Line at AOS.

Technical Highlights

• Top-Side Cooled Package maximises power density by co-optimising both the electrical and thermal paths.
• Gull-Wing Leads deliver superior board-level reliability in mission-critical environments.
• Robust built-in fast body diode reduces Qrr for high-stress applications
• Enhanced robustness with strong UIS, inrush current handling, and wide SOA capabilities
• Designed to prevent self-turn-on, ensuring reliable operation under dynamic conditions
• Suitable for Boost PFC, Totem Pole PFC, LLC, PSFB, and CrCM H-4/Cyclo Inverter applications

Pricing and Availability

The AOGT037V60DE2 (600 V, 37 mΩ) and AOGT060V60DE2 (600 V, 60 mΩ) in top-side-cooled GTPAK packages are now available in production quantities with a lead time of 16 weeks. The unit prices for 1,000-piece quantities are $6.00 and $3.00, respectively.