Navitas Delivers 5th-Generation GaNFast Technology Through US Manufacturing Partnership

Navitas Semiconductor has announced the delivery of its latest fifth-generation GaNFast power semiconductor technology, manufactured in the United States through its strategic collaboration with GlobalFoundries. The development represents a step towards strengthening domestic production of gallium nitride (GaN) power devices as demand increases for more efficient power conversion across artificial intelligence infrastructure and other high-performance applications.

The partnership brings together Navitas’ expertise in GaN power semiconductor technology with GlobalFoundries’ established semiconductor manufacturing capabilities in the US. By combining technology development with domestic production, the companies aim to create a more resilient supply chain for advanced power devices while supporting the growing requirements of data centres and other energy-intensive applications.

Navitas’ fifth-generation GaNFast platform is designed to improve power efficiency and performance in applications where reducing energy consumption, system size and thermal requirements is becoming increasingly important. GaN technology is gaining greater attention in AI data centres because the rapid expansion of computing capacity is also increasing the amount of power required to operate and cool these facilities.

The US manufacturing initiative is therefore positioned as more than a supply-chain development. It also reflects the increasing importance of locally produced semiconductor technologies for critical infrastructure. As governments and technology companies seek to reduce dependence on concentrated global supply chains, domestic manufacturing partnerships are becoming an increasingly important part of semiconductor strategy.

For Navitas, the collaboration with GlobalFoundries provides an opportunity to scale its GaN technology while addressing demand from customers seeking greater supply-chain security. The company expects its US-manufactured GaN solutions to support a range of applications, including AI infrastructure, data-centre power systems, industrial equipment, energy systems and electrification.

The move also highlights the expanding role of GaN in next-generation power management. Compared with conventional silicon-based power technologies, GaN devices can enable higher switching frequencies and improved power conversion efficiency, helping system designers develop smaller and more energy-efficient power architectures. These characteristics are particularly relevant to AI and high-performance computing environments, where power delivery and energy efficiency have become major considerations.

GlobalFoundries’ involvement further strengthens the manufacturing dimension of the programme by providing access to established US semiconductor production infrastructure. The companies are seeking to build a scalable manufacturing pathway that can support increasing demand as GaN adoption expands across both data-centre and industrial markets.

The announcement comes as semiconductor manufacturers, technology suppliers and infrastructure operators place greater emphasis on energy efficiency and supply-chain resilience. The rapid growth of AI workloads is driving investment not only in processors, memory and advanced packaging, but also in the power-management technologies required to deliver electricity efficiently to increasingly dense computing systems.

Through its latest GaNFast generation and its partnership with GlobalFoundries, Navitas is positioning GaN power technology as an important component of this evolving infrastructure. The US manufacturing programme could also help accelerate adoption of GaN across applications where efficiency, reliability, power density and secure semiconductor supply are increasingly critical.