Sivers Semiconductors and SemiNex Launch $3.4M InP Laser Programme for AI Data Centre Interconnects
The collaboration targets high-power laser sources, DFB arrays and SOA gain stages to support scalable co-packaged optics and next-generation AI networking.
Sivers Semiconductors AB (STO: SIVE), a global leader in photonics and wireless technologies and SemiNex Corporation, a developer of high-power indium phosphide (InP) laser diodes, DFB lasers, semiconductor optical amplifiers (SOAs) and external cavity lasers, announced a program for next-generation InP light sources for AI data center interconnects. The program is initially valued at approximately $3.4 million.
The program targets high-power external laser sources for co-packaged optics (CPO), high-channel-count DFB arrays for wavelength-multiplexed links, and SOA gain stages that extend optical reach as channel counts scale. As optics move from the faceplate into the package, power per wavelength, wall-plug efficiency, and thermal stability increasingly determine how far an architecture can scale, making the light source a system-level design problem rather than a component selection.
"The advanced light sources needed for next-generation optical networking within AI factories are as crucial as the compute, memory and silicon photonics elements," said Vickram Vathulya, Chief Executive Officer of Sivers Semiconductors. "We highly value our partnership with SemiNex to combine innovative technologies and deliver compelling light source solutions at scale to the market."
"The optical layer is becoming the constraint on how far AI infrastructure can scale. The industry needs more power, at more wavelengths, at higher efficiency, and there is no way to get there by pushing today's devices harder," said Ronald Moore, Chief Executive Officer of SemiNex. "Those gains come out of the design and processing of the InP itself, and that is exactly where our two teams are working together."
