Mitsubishi Electric Unveils Advanced Silicon Carbide Power Semiconductor Facility in Kumamoto

Mitsubishi Electric Corporation  celebrated the completion of its new cutting-edge facility for producing power semiconductors at its Kikuchi Plant in Kumamoto Prefecture. The six-story, 42,000-square-meter facility is slated to begin operations in November 2025, with mass production expected in 2027.

The facility will focus on manufacturing silicon carbide (SiC) power semiconductors, which offer higher energy efficiency than traditional silicon-based chips. These semiconductors are critical for applications in electric vehicles (EVs) and home appliances, supporting the growing demand for energy-efficient electronics worldwide.

“Silicon carbide semiconductors are a key technology for next-generation energy-efficient applications,” said Mitsubishi Electric President Kei Uruma. “We will carefully assess market conditions to determine the number of production lines needed and align our expansion plans accordingly.”

The new facility is part of Mitsubishi Electric’s Shisui Plant, representing an investment of approximately 100 billion yen. It will handle advanced wafer processing, including circuit etching, positioning the company to respond to medium- to long-term growth in EV-related semiconductor demand.

While some equipment expansion plans have been postponed to fiscal 2031 and beyond due to slower-than-expected EV market growth, the company remains committed to scaling production in line with future demand trends.

Mitsubishi Electric continues to advance its capabilities in high-efficiency power semiconductors, reinforcing its position as a global leader in innovative semiconductor solutions.